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PhD Positions in RF/Microwave Gallium Nitride (GaN) MMIC Design and Test, Netherlands

The University of Twente is offering three PhD Positions in RF/Microwave Gallium Nitride (GaN) MMIC Design and Test as part of the POLARIS programme. These positions focus on advancing GaN technology for applications in medical, defence, and communication systems.

Applicants from all nationalities are welcome. Candidates must hold an MSc degree in Electrical Engineering with excellent grades, preferably specializing in Analog, RF, or Microwave Engineering. They should demonstrate a strong background or affinity with device physics, IC design, or microwave theory/measurements, and possess excellent problem-solving skills.

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The University of Twente (UT) is a leading research university known for its strong focus on technology, innovation, and entrepreneurship located in Enschede, the Netherlands. It combines engineering, social sciences, and natural sciences to address real-world challenges, fostering interdisciplinary research and industry collaboration. UT is renowned for its vibrant campus, cutting-edge facilities, and programs that encourage students and researchers to develop solutions with societal impact.

Application Deadline: September 29, 2025

Brief Description

  • University or Organization: University of Twente

  • Department: Faculty of Electrical Engineering (RF IC Design Group)

  • Course Level: PhD (Doctoral Research)

  • Award: Salary

  • Access Mode: Online application

  • Number of Awards: 3

  • Nationality: Domestic and international

  • The award can be taken in: the Netherlands

Eligibility

  • Eligible Countries: Applicants from all countries are welcome.

  • Acceptable Course or Subjects: The scholarship will be awarded in RF/Microwave design, MMIC design, or related fields within Electrical Engineering.

  • Admissible Criteria: To be eligible, candidates must:

    • Hold an MSc degree with excellent grades in Electrical Engineering, specializing in Analog, RF, or Microwave engineering.

    • Demonstrate affinity with device physics, IC design, or microwave theory/measurements.

    • Be highly motivated, independent, and eager to contribute to state-of-the-art GaN research.

    • Be fluent in English with proof of language proficiency (IELTS ? 6.5, TOEFL-iBT ? 90, or Cambridge C1).

    • Have a passion for pushing technological boundaries and collaborating within an international research environment.

How to Apply

Interested candidates should submit their applications online by 29 September 2025. Required documents include:

  • A cover letter (maximum 2 A4 pages) explaining motivation, qualifications, and research interests.

  • A detailed CV including academic transcripts, relevant courses, grades, publications (if any), and references.

For more information, applicants may contact Mark Oude Alink at [email protected]

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